Datasheet > IPP034N08N5

IPP034N08N5

更新时间： 2024-09-16 11:12:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	1844K
描述
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

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IPP034N08N5 数据手册

MOSFET

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor

OptiMOS^TM

OptiMOS^ª5ꢀPower-Transistor,ꢀ80ꢀV

IPP034N08N5

DataꢀSheet

Rev.ꢀ2.0

Final

PowerꢀManagementꢀ&ꢀMultimarket

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
IPP034NE7N3 G	INFINEON	获取价格	75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术，这些75V产品同时具
IPP034NE7N3G	INFINEON	获取价格	OptiMOSTM3 Power-Transistor Features Optimized technology for synchronous rectification
IPP034NE7N3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, M
IPP037N06L3G	INFINEON	获取价格	Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
IPP037N06L3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
IPP037N08N3 G	INFINEON	获取价格	OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源
IPP037N08N3G	INFINEON	获取价格	OptiMOS3 Power-Transistor
IPP039N04LG	INFINEON	获取价格	OptiMOS3 Power-Transistor
IPP039N04LGXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me
IPP039N10N5	INFINEON	获取价格	采用TO-220封装的OptiMOS™5 100V功率MOSFET非常适合高频开关和同步整