Datasheet > IPP023N08N5

IPP023N08N5

更新时间： 2024-10-31 11:11:55

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	1847K
描述
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

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IPP023N08N5 技术参数

MOSFET

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor

OptiMOS^TM

OptiMOS^ª5ꢀPower-Transistor,ꢀ80ꢀV

IPP023N08N5

DataꢀSheet

Rev.ꢀ2.0

Final

PowerꢀManagementꢀ&ꢀMultimarket

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
IPP023N08N5AKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 80V, 0.0023ohm, 1-Element, N-Channel, Silicon, M
IPP023N10N5	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon,
IPP023N10N5AKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon,
IPP023NE7N3 G	INFINEON	获取价格	75V OptiMOS?技术专注于同步整流应用。基于领先的80V技术，这些75V产品同时具
IPP023NE7N3G	INFINEON	获取价格	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPP023NE7N3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, M
IPP024N06N3G	INFINEON	获取价格	OptiMOS™3 Power-Transistor Features Ideal for
IPP024N06N3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, M
IPP024N08NF2S	INFINEON	获取价格	Infineon's StrongIRFET? 2?power MOSFET?80 V features low RDS(on) of 2.4 mOhm, addressing a
IPP026N04NF2S	INFINEON	获取价格	英飞凌 StrongIRFET? 2 40 V 功率 MOSFET 具备仅为?2.6 mΩ