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IPP023N08N5 PDF预览

IPP023N08N5

更新时间: 2024-11-25 11:11:55
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 1847K
描述
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

IPP023N08N5 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:2.3
雪崩能效等级(Eas):674 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:80 V
最大漏极电流 (ID):120 A最大漏源导通电阻:0.0023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):480 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPP023N08N5 数据手册

 浏览型号IPP023N08N5的Datasheet PDF文件第2页浏览型号IPP023N08N5的Datasheet PDF文件第3页浏览型号IPP023N08N5的Datasheet PDF文件第4页浏览型号IPP023N08N5的Datasheet PDF文件第5页浏览型号IPP023N08N5的Datasheet PDF文件第6页浏览型号IPP023N08N5的Datasheet PDF文件第7页 
MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
OptiMOSTM  
OptiMOSª5ꢀPower-Transistor,ꢀ80ꢀV  
IPP023N08N5  
DataꢀSheet  
Rev.ꢀ2.0  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  

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