IPP023N04NG

更新时间： 2024-09-13 11:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	241K
描述
OptiMOS?3 Power-Transistor

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中文翻译

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数据手册
替代型号

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IPP023N04NG 数据手册

Type

IPP023N04N G

IPB023N04N G

OptiMOS^™3 Power-Transistor

Product Summary

Features

V _DS

2.3

• MOSFET for ORing and Uninterruptible Power Supply

• Qualified according to JEDEC¹⁾for target applications

R _DS(on),max

I _D

mΩ

• N-channel

• Normal level

• Ultra-low on-resistance R _DS(on)

• 100% Avalanche tested

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

IPB023N04N G

IPP023N04N G

Package

Marking

PG-TO263-3

023N04N

PG-TO220-3

023N04N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

_GS=10 V, T _C=100 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

I _AS

T _C=25 °C

400

Avalanche current, single pulse³⁾

Avalanche energy, single pulse

Gate source voltage

E _AS

V _GS

I _D=90 A, R _GS=25 Ω

150

±20

¹⁾J-STD20 and JESD22

Rev. 1.2

page 1

2009-12-11

12 3 4 5 6 7...10

中文翻译

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IPP023N04NG 替代型号

型号	品牌	替代类型	描述	数据表
IPP023N04NGXKSA1	INFINEON	功能相似	Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Me

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