Datasheet > IPP023N08N5AKSA1

IPP023N08N5AKSA1

更新时间： 2024-09-13 19:55:23

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	1804K
描述
Power Field-Effect Transistor, 120A I(D), 80V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IPP023N08N5AKSA1 技术参数

MOSFET

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor

OptiMOS^TM

OptiMOS^ª5ꢀPower-Transistor,ꢀ80ꢀV

IPP023N08N5

DataꢀSheet

Rev.ꢀ2.0

Final

PowerꢀManagementꢀ&ꢀMultimarket

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
IPP023N10N5	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon,
IPP023N10N5AKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon,
IPP023NE7N3 G	INFINEON	获取价格	75V OptiMOS?技术专注于同步整流应用。基于领先的80V技术，这些75V产品同时具
IPP023NE7N3G	INFINEON	获取价格	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPP023NE7N3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, M
IPP024N06N3G	INFINEON	获取价格	OptiMOS™3 Power-Transistor Features Ideal for
IPP024N06N3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, M
IPP024N08NF2S	INFINEON	获取价格	Infineon's StrongIRFET? 2?power MOSFET?80 V features low RDS(on) of 2.4 mOhm, addressing a
IPP026N04NF2S	INFINEON	获取价格	英飞凌 StrongIRFET? 2 40 V 功率 MOSFET 具备仅为?2.6 mΩ
IPP026N10NF2S	INFINEON	获取价格	Infineon's StrongIRFET™ 2 power MOSFET 100 V