IPP024N06N3G

更新时间： 2024-09-13 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
11页	479K
描述
OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.

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中文翻译

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数据手册

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IPP024N06N3G 数据手册

Type

IPB021N06N3 G IPI024N06N3 G

IPP024N06N3 G

OptiMOS^™3 Power-Transistor

Product Summary

Features

V _DS

2.1

120

• Ideal for high frequency switching and sync. rec.

• Optimized technology for DC/DC converters

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R_DS(on)

R _{DS(on),max (SMD)}

I _D

mΩ

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

• Halogen-free according to IEC61249-2-21

Type

IPB021N06N3 G

IPI024N06N3 G

IPP024N06N3 G

Package

Marking

PG-TO263-3

021N06N

PG-TO262-3

024N06N

PG-TO220-3

024N06N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

120

T _C=100 °C

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

480

Avalanche energy, single pulse⁴⁾

Gate source voltage

I _D=100 A, R _GS=25 Ω

634

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

250

°C

T _j, T _stg

Operating and storage temperature

-55 ... 175

55/175/56

IEC climatic category; DIN IEC 68-1

¹⁾J-STD20 and JESD22

²⁾Current is limited by bondwire; with anR _thJC=0.6 K/W the chip is able to carry 256A.

³⁾See figure 3 for more detailed information

⁴⁾See figure 13 for more detailed information

Rev. 2.2

page 1

2009-12-11

12 3 4 5 6 7...11

中文翻译

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