品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | / | |
页数 | 文件大小 | 规格书 |
11页 | 1048K | |
描述 | ||
Infineon's StrongIRFET? 2?power MOSFET?80 V features low RDS(on) of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP024N08NF2S achieves 40 percent lower RDS(on) and 40 percent Qg improvement. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP026N04NF2S | INFINEON |
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英飞凌 StrongIRFET? 2 40 V 功率 MOSFET 具备仅为?2.6 mΩ | |
IPP026N10NF2S | INFINEON |
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Infineon's StrongIRFET™ 2 power MOSFET 100 V | |
IPP027N08N5 | INFINEON |
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OptiMOS™ 5 80 V power MOSFET, especially desi | |
IPP028N08N3 G | INFINEON |
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OptiMOS™ 系列是高效率解决方案的市场领导者,适用于发电(例如太阳能微逆变器)、电源 | |
IPP028N08N3G | INFINEON |
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OptiMOS®3 Power-Transistor Features Excellent | |
IPP028N08N3GXKSA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, M | |
IPP029N06N | INFINEON |
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New OptiMOS⢠40V and 60V | |
IPP030N06NF2S | INFINEON |
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英飞凌 StrongIRFET™ 2 60 V 功率 MOSFET 具备仅为 3.05 m | |
IPP030N10N3 G | INFINEON |
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英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM | |
IPP030N10N3G | INFINEON |
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OptiMOS3 Power-Transistor |