Datasheet > IPB080N06NG_10

IPB080N06NG_10

更新时间： 2024-09-16 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极开关
页数	文件大小	规格书
10页	416K
描述
OptiMOS™ Power-Transistor Features Low gate charge for fast switching applications

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IPB080N06NG_10 数据手册

IPB080N06N G

IPP080N06N G

OptiMOS^™Power-Transistor

Product Summary

Features

V _DS

7.7

• Low gate charge for fast switching applications

• N-channel enhancement - normal level

R _{DS(on),max SMDversion}

I _D

mΩ

• 175 °C operating temperature

• Avalanche rated

• Pb-free lead plating, RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

IPB080N06N G

IPP080N06N G

Package

Marking

P-TO263-3-2

080N06N

P-TO220-3-1

080N06N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C¹⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C²⁾

I _D,pulse

Pulsed drain current

320

448

E _AS

I _D=80 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=80 A, V _DS=48 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

214

°C

T _j, T _stg

Operating and storage temperature

-55 ... 175

55/175/56

IEC climatic category; DIN IEC 68-1

¹⁾Current is limited by bondwire; with anR _thJC=0.7 K/W the chip is able to carry 107 A.

²⁾See figure 3

Rev. 1.05

page 1

2010-01-19

12 3 4 5 6 7...10

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