Datasheet > IPB100N04S3-03

IPB100N04S3-03

更新时间： 2024-09-28 12:20:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	202K
描述
OptiMOS-T Power-Transistor

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替代型号

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IPB100N04S3-03 数据手册

IPB100N04S3-03

IPI100N04S3-03, IPP100N04S3-03

OptiMOS^®-T Power-Transistor

Product Summary

V_DS

2.5

100

_DS(on)(SMD Version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

Type

Package

Marking

3PN0403

IPB100N04S3-03

IPI100N04S3-03

IPP100N04S3-03

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C, V_GS=10V¹⁾

I _D

Continuous drain current

100

T _C=100°C, V_GS=10V²⁾

100

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=80 A

400

898

Avalanche energy, single pulse

Gate source voltage

V_GS

±20

P_tot

T _C=25 °C

Power dissipation

214

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2007-05-03

12 3 4 5 6 7...9

中文翻译

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IPB100N04S3-03 替代型号

型号	品牌	替代类型	描述	数据表
IPB100N04S2-04	INFINEON	类似代替	OptiMOS㈢ Power-Transistor
SPB100N04S2-04	INFINEON	类似代替	OptiMOS Power-Transistor

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