生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.76 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 75 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.0151 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 350 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB09N03LAT | INFINEON |
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OptiMOS 2Power-Transistor |
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IPB09N09LA | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Me |
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IPB100N04S2-04 | INFINEON |
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OptiMOS㈢ Power-Transistor |
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IPB100N04S204ATMA4 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, M |
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IPB100N04S2L-03 | INFINEON |
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OptiMOS㈢ Power-Transistor |
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IPB100N04S3-03 | INFINEON |
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OptiMOS-T Power-Transistor |
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IPB100N04S4-H2 | INFINEON |
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OptiMOS-T2 Power-Transistor |
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IPB100N04S4H2ATMA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, M |
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IPB100N06S2-05 | INFINEON |
获取价格 |
OptiMOS Power-Transistor |
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IPB100N06S205ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, M |
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