Datasheet > IPB08CN10NG_10

IPB08CN10NG_10

更新时间： 2024-11-09 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体栅极晶体管
页数	文件大小	规格书
11页	409K
描述
OptiMOS™2 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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IPB08CN10NG_10 数据手册

IPB08CN10N G

IPI08CN10N G IPP08CN10N G

OptiMOS^™2 Power-Transistor

Product Summary

Features

V _DS

100

8.2

• N-channel, normal level

R _{DS(on),max (TO263)}

I _D

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Type

IPB08CN10N G

IPI08CN10N G

IPP08CN10N G

Package

Marking

PG-TO263-3

08CN10N

PG-TO262-3

08CN10N

PG-TO220-3

08CN10N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

380

262

I _D=95 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=95 A, V _DS=80 V,

di /dt =100 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage³⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

167

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

Rev. 1.08

page 1

2010-04-26

12 3 4 5 6 7...11

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