IPB09N03LA

更新时间： 2024-11-23 22:26:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	348K
描述
OptiMOS 2 Power-Transistor

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IPB09N03LA 数据手册

IPB09N03LA

IPI09N03LA, IPP09N03LA

OptiMOS^®2 Power-Transistor

Product Summary

Features

V _DS

8.9

• Ideal for high-frequency dc/dc converters

• N-channel

R _DS(on),max(SMD version)

mΩ

I _D

• Logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

P-TO263-3-2

P-TO262-3-1

P-TO220-3-1

• Superior thermal resistance

• 175 °C operating temperature

• dv /dt rated

Type

Package

Ordering Code Marking

IPB09N03LA

IPI09N03LA

IPP09N03LA

P-TO263-3-2

P-TO262-3-1

P-TO220-3-1

Q67042-S4151

Q67042-S4152

Q67042-S4153

09N03LA

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C¹⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C²⁾

I _D,pulse

Pulsed drain current

350

E _AS

I _D=45 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=50 A, V _DS=20 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage³⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

Rev. 1.3

page 1

2003-12-18

12 3 4 5 6 7...10

中文翻译

下载PDF

IPB09N03LA 替代型号

型号	品牌	替代类型	描述	数据表
IPB09N03LAG	INFINEON	类似代替	OptiMOS㈢2 Power-Transistor

与IPB09N03LA相关器件

型号	品牌	获取价格	描述	数据表
IPB09N03LAG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
IPB09N03LAGATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Me
IPB09N03LAT	INFINEON	获取价格	OptiMOS 2Power-Transistor
IPB09N09LA	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Me
IPB100N04S2-04	INFINEON	获取价格	OptiMOS㈢ Power-Transistor
IPB100N04S204ATMA4	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, M
IPB100N04S2L-03	INFINEON	获取价格	OptiMOS㈢ Power-Transistor
IPB100N04S3-03	INFINEON	获取价格	OptiMOS-T Power-Transistor
IPB100N04S4-H2	INFINEON	获取价格	OptiMOS-T2 Power-Transistor
IPB100N04S4H2ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, M