Datasheet > H5MS5132DFR-K3M

H5MS5132DFR-K3M

更新时间： 2024-11-02 06:37:23

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器双倍数据速率
页数	文件大小	规格书
62页	2311K
描述
DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LEAD FREE, FBGA-90

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

H5MS5132DFR-K3M 数据手册

512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O

Specification of

512Mbꢀ(16Mx32bit)ꢀMobileꢀDDRꢀSDRAM

Memory Cell Array

ꢀꢁꢀOrganizedꢀasꢀ4banksꢀofꢀ4,194,304ꢀx32

Thisꢀdocumentꢀisꢀaꢀgeneralꢀproductꢀdescriptionꢀandꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀHynixꢀdoesꢀnotꢀassumeꢀanyꢀresponsibilityꢀforꢀ

useꢀofꢀcircuitsꢀdescribed.ꢀNoꢀpatentꢀlicensesꢀareꢀimplied.

Rev 1.2 / Jul. 2008

12 3 4 5 6 7...62

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
H5MS5132DFR-L3M	HYNIX	获取价格	DDR DRAM, 16MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LE
H5MS5162DFR-E3M	HYNIX	获取价格	512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162DFR-J3M	HYNIX	获取价格	512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162DFR-K3M	HYNIX	获取价格	512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162DFR-L3M	HYNIX	获取价格	512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162EFR	HYNIX	获取价格	536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
H5N0301SM	ETC	获取价格
H5N1503P	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N1503P-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N1506P	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching