H5MS5162DFR-J3M

更新时间： 2024-02-06 11:11:20

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H5MS5162DFR-J3M 数据手册

512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O

Specification of

512Mb (32Mx16bit) Mobile DDR SDRAM

Memory Cell Array

- Organized as 4banks of 8,388,608 x16

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 1.3 / Apr. 2009

12 3 4 5 6 7...62

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型号	品牌	获取价格	描述	数据表
H5MS5162DFR-K3M	HYNIX	获取价格	512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162DFR-L3M	HYNIX	获取价格	512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162EFR	HYNIX	获取价格	536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
H5N0301SM	ETC	获取价格
H5N1503P	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N1503P-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N1506P	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N1506P-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LD	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LD-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching