H5N2001LD

更新时间： 2024-11-01 07:02:35

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
8页	100K
描述
Silicon N Channel MOS FET High Speed Power Switching

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H5N2001LD 数据手册

H5N2001LD, H5N2001LS, H5N2001LM

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1339-0600

Rev.6.00

Jul 14, 2006

Features

•

Low on-resistance

Low leakage current

High speed switching

Outline

RENESAS Package code: PRSS0004AE-A

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

(Package name: LDPAK (L) )

1. Gate

2. Drain

3. Source

4. Drain

H5N2001LD

H5N2001LS

RENESAS Package code: PRSS0004AE-C

(Package name: LDPAK (S)-(2) )

H5N2001LM

Rev.6.00 Jul 14, 2006 page 1 of 7

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
H5N2001LD-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LM	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LMTL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LS	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LSTL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2003P	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2003P-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2004D(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
H5N2004D(S)-(3)	HITACHI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,8A I(D),TO-252AA
H5N2004DL	HITACHI	获取价格	Power Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Meta