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H5N1506P PDF预览

H5N1506P

更新时间: 2024-11-01 07:02:35
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
7页 94K
描述
Silicon N Channel MOS FET High Speed Power Switching

H5N1506P 数据手册

 浏览型号H5N1506P的Datasheet PDF文件第2页浏览型号H5N1506P的Datasheet PDF文件第3页浏览型号H5N1506P的Datasheet PDF文件第4页浏览型号H5N1506P的Datasheet PDF文件第5页浏览型号H5N1506P的Datasheet PDF文件第6页浏览型号H5N1506P的Datasheet PDF文件第7页 
H5N1506P  
Silicon N Channel MOS FET  
High Speed Power Switching  
REJ03G0389-0200  
Rev.2.00  
Jul 03, 2006  
Features  
Low on-resistance  
Low leakage current  
High speed switching  
Outline  
RENESAS Package code: PRSS0004ZE-A  
(Package name: TO-3P)  
D
1. Gate  
2. Drain (Flange)  
3. Source  
G
1
2
3
S
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to Source voltage  
Gate to Source voltage  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
150  
±30  
98  
Unit  
V
V
Drain current  
A
Note1  
Drain peak current  
ID (pulse)  
IDR  
294  
98  
A
Body-Drain diode reverse Drain current  
Body-Drain diode reverse Drain peak current  
Avalanche current  
A
Note1  
IDR (pulse)  
294  
48  
A
Note3  
IAP  
A
Note3  
Avalanche energy  
EAR  
172  
150  
0.833  
150  
mJ  
W
°C/W  
°C  
°C  
Channel dissipation  
Pch Note2  
θch-c  
Tch  
Channel to case thermal impedance  
Channel temperature  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at Tc = 25°C  
3. STch = 25°C, Tch 150°C  
Rev.2.00 Jul 03, 2006 page 1 of 6  

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