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H5N2004DS-E PDF预览

H5N2004DS-E

更新时间: 2024-09-27 20:01:15
品牌 Logo 应用领域
瑞萨 - RENESAS ISM频段开关脉冲晶体管
页数 文件大小 规格书
14页 74K
描述
8A, 200V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

H5N2004DS-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.19
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):8 A
最大漏源导通电阻:0.48 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):32 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:20
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

H5N2004DS-E 数据手册

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To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

H5N2004DS-E 替代型号

型号 品牌 替代类型 描述 数据表
2SK216 RENESAS

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Silicon N Channel MOS FET
2SK214 RENESAS

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Silicon N Channel MOS FET

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