H5N2004DL

更新时间： 2024-09-27 07:02:35

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体开关晶体管功率场效应晶体管脉冲电源开关
页数	文件大小	规格书
8页	91K
描述
Silicon N Channel MOS FET High Speed Power Switching

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H5N2004DL 技术参数

H5N2004DL, H5N2004DS

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1103-0200

(Previous: ADE-208-1372)

Rev.2.00

Sep 07, 2005

Features

•

Low on-resistance: R _{DS (on)}= 0.38 Ω typ.

Low leakage current: I_DSS= 1 µA max (at V_DS= 200 V)

High speed switching: t_f= 10 ns typ (at V_GS= 10 V, V_DD= 100 V, I_D= 4 A)

Low gate charge: Qg = 14 nC typ (at V_DD= 160 V, V_GS= 10 V, I_D= 8 A)

Avalanche ratings

Outline

RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (L)-(2) ) (Package name: DPAK (S) )

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00 Sep 07, 2005 page 1 of 7

12 3 4 5 6 7 8

中文翻译

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型号	品牌	获取价格	描述	数据表
H5N2004DL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2004DS	HITACHI	获取价格	Power Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Meta
H5N2004DS	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2004DS-E	RENESAS	获取价格	8A, 200V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
H5N2004DSTL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2005D(L)-(2)	HITACHI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6A I(D),TO-251
H5N2005D(S)-(1)	HITACHI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6A I(D),TO-252AA
H5N2005D(S)-(3)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
H5N2005DL	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2005DL	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching