Datasheet > H5N2008P

H5N2008P

更新时间： 2024-09-26 21:55:35

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	116K
描述
Silicon N Channel MOS FET High Speed Power Switching

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H5N2008P 数据手册

H5N2008P

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G0390-0300

Rev.3.00

Nov.24.2004

Features

•

Low on-resistance

Low leakage current

High speed switching

Outline

TO-3P

1. Gate

2. Drain (Flange)

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

200

Unit

±30

Note1

Drain peak current

I_{D (pulse)}

I_DR

192

Body-Drain diode reverse Drain current

Note1

Body-Drain diode reverse Drain peak current

Avalanche current

I_{DR (pulse)}

192

Note3

I_AP

Note3

Avalanche energy

E_AR

153

Channel dissipation

Pch ^Note2

θch-c

Tch

150

Channel to case thermal impedance

Channel temperature

0.833

150

°C/W

°C

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

Rev.3.00 Nov.24.2004 page 1 of 6

12 3 4 5 6 7

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