Datasheet > H5N2004D(S)-(1)

H5N2004D(S)-(1)

更新时间： 2024-01-10 18:50:21

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
12页	55K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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H5N2004D(S)-(1) 技术参数

H5N2004DL, H5N2004DS

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-1372 (Z)

1st. Edition

Mar. 2001

Features

•

Low on-resistance: R_DS(on)= 0.38 typ.

Low leakage current: IDSS = 1 µA max (at VDS = 200 V)

High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)

Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A)

Avalanche ratings

Outline

DPAK-2

H5N2004DS

1. Gate

2. Drain

3. Source

4. Drain

H5N2004DL

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
H5N2004D(S)-(3)	HITACHI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,8A I(D),TO-252AA
H5N2004DL	HITACHI	获取价格	Power Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Meta
H5N2004DL	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2004DL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2004DS	HITACHI	获取价格	Power Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Meta
H5N2004DS	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2004DS-E	RENESAS	获取价格	8A, 200V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
H5N2004DSTL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2005D(L)-(2)	HITACHI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6A I(D),TO-251
H5N2005D(S)-(1)	HITACHI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6A I(D),TO-252AA