FZT657Q

更新时间： 2024-09-17 13:45:39

品牌	Logo	应用领域
美台 - DIODES		晶体管功率双极晶体管
页数	文件大小	规格书
2页	91K
描述
NPN, 300V, 0.5A, SOT223

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中文翻译

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数据手册

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FZT657Q 数据手册

SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 FEBRUARY 1995

FZT657

FEATURES

Low saturation voltage

COMPLEMENTARY TYPE - FZT757

PARTMARKING DETAIL - FZT657

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

300

Collector-Emitter Voltage

300

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

I_C

0.5

P_tot

°C

T_j:T_stg

-55 to +150

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

300

I_C=100µA

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

I_C=10mA*

Emitter-Base Breakdown V_(BR)EBO

Voltage

I_E=100µA

Collector Cut-Off Current I_CBO

0.1

V_CB=200V

µA

Emitter Cut-Off Current

I_EBO

0.1

0.5

V_EB=3V

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

I_C=100mA, I_B=10mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

1.0

I_C=100mA, I_B=10mA*

I_C=100mA, V_CE=5V*

Base-Emitter

Turn-On Voltage

Static Forward Current

Transfer Ratio

I_C=10mA, V_CE=5V*

I_C=100mA, V_CE=5V*

Transition Frequency

f_T

MHz

I_C=10mA, V_CE=20V

f=20MHz

Output Capacitance

C_obo

V_CB=20V, f=1MHz

*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 213

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