FZT689

更新时间： 2024-11-17 22:48:51

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
2页	105K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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FZT689 数据手册

SOT223 NPN SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FZT689B

FEATURES

Gain of 400 at I_C=2 Amps and low saturation voltage

Extremely low equivalent on-resistance; R_CE(sat)92mΩ at 3A

APPLICATIONS

Darlington replacement

Flash gun convertors and Battery powered circuits

PARTMARKING DETAIL -

COMPLEMENTARY TYPE -

FZT689B

FZT789B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C)

amb

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

PARAMETER

Breakdown Voltage

Collector-Base

Collector-Emitter

V_(BR)CBO

V_(BR)CEO

I_C=100µA

I_C=10mA*

Emitter-Base

V_(BR)EBO

I_CBO

I_E=100µA

Collector Cut-Off Current

Emitter Cut-Off Current

0.1

_CB=16V

_EB=4V

µA

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.10

0.50

0.45

I_C=0.1A, I_B=0.5mA*

I_C=2A, I_B=10mA*

I_C=3A, I_B=20mA*

Base-EmitterSaturationVoltage V_BE(sat)

0.9

I_C=1A, I_B=10mA*

I_C=1A, V_CE=2V*

Base-Emitter

Turn-On Voltage

V_BE(on)

Static Forward

Current Transfer

Ratio

h_FE

500

400

150

I_C=0.1A, V_CE=2V*

I_C=2A, V_CE=2V*

I_C=6A, V_CE=2V*

Transition Frequency

f_T

150

MHz I_C=50mA, V_CE=5V

f=50MHz

Input Capacitance

Output Capacitance

Switching Times

C_ibo

200

V_EB=0.5V, f=1MHz

V_CB=10V, f=1MHz

C_obo

t_on

t_off

800

I_C=500mA,I_B1=50mA

I_B2=50mA, V_CC=10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 219

中文翻译

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与FZT689相关器件

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FZT689B	ZETEX	获取价格	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT689B	DIODES	获取价格	SOT223 NPN SILICON PLANAR MEDIUM
FZT689BTA	DIODES	获取价格	Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
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FZT689BTC	ZETEX	获取价格	Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT689BTC	DIODES	获取价格	暂无描述
FZT690	ZETEX	获取价格	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT690B	ZETEX	获取价格	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT690B	DIODES	获取价格	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT690B	KEXIN	获取价格	NPN Silicon Planar Medium Power High Gain Transistor