生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.16 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FZT658 | DIODES |
类似代替 |
SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
FZT658TA | DIODES |
功能相似 |
400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZT660 | ETC |
获取价格 |
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FZT660A | ETC |
获取价格 |
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FZT660AD84Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
FZT660AL99Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
FZT660AS62Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
FZT660D84Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
FZT660L99Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
FZT660S62Z | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
FZT688B | TYSEMI |
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Extremely low equivalent on resistance; RCE(s | |
FZT688B | KEXIN |
获取价格 |
NPN Silicon Planar Medium Power High Gain Transistor |