5秒后页面跳转
FZT689BTA PDF预览

FZT689BTA

更新时间: 2024-11-18 13:07:55
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
2页 105K
描述
Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

FZT689BTA 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.16
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
基于收集器的最大容量:16 pF集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):150
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
最大关闭时间(toff):800 ns最大开启时间(吨):30 ns
VCEsat-Max:0.45 VBase Number Matches:1

FZT689BTA 数据手册

 浏览型号FZT689BTA的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR MEDIUM  
POWER HIGH GAIN TRANSISTOR  
ISSUE 3 - OCTOBER 1995  
FZT689B  
FEATURES  
*
*
Gain of 400 at IC=2 Amps and low saturation voltage  
C
Extremely low equivalent on-resistance; RCE(sat) 92mat 3A  
APPLICATIONS  
*
*
Darlington replacement  
E
Flash gun convertors and Battery powered circuits  
PARTMARKING DETAIL -  
COMPLEMENTARY TYPE -  
FZT689B  
FZT789B  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
Collector-Base Voltage  
20  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
20  
5
V
Peak Pulse Current  
8
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
3
2
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C)  
amb  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
PARAMETER  
Breakdown Voltage  
Collector-Base  
Collector-Emitter  
V(BR)CBO  
V(BR)CEO  
20  
20  
V
V
IC=100µA  
IC=10mA*  
Emitter-Base  
V(BR)EBO  
ICBO  
5
V
IE=100µA  
Collector Cut-Off Current  
Emitter Cut-Off Current  
0.1  
0.1  
V
CB=16V  
EB=4V  
µA  
µA  
IEBO  
V
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.10  
0.50  
0.45  
V
V
V
IC=0.1A, IB=0.5mA*  
IC=2A, IB=10mA*  
IC=3A, IB=20mA*  
Base-EmitterSaturationVoltage VBE(sat)  
0.9  
0.9  
V
V
IC=1A, IB=10mA*  
IC=1A, VCE=2V*  
Base-Emitter  
Turn-On Voltage  
VBE(on)  
Static Forward  
Current Transfer  
Ratio  
hFE  
500  
400  
150  
IC=0.1A, VCE=2V*  
IC=2A, VCE=2V*  
IC=6A, VCE=2V*  
Transition Frequency  
fT  
150  
MHz IC=50mA, VCE=5V  
f=50MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
200  
16  
pF  
pF  
VEB=0.5V, f=1MHz  
VCB=10V, f=1MHz  
Cobo  
ton  
toff  
30  
800  
ns  
ns  
IC=500mA,IB1=50mA  
IB2=50mA, VCC=10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 219  

与FZT689BTA相关器件

型号 品牌 获取价格 描述 数据表
FZT689BTC ZETEX

获取价格

Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT689BTC DIODES

获取价格

暂无描述
FZT690 ZETEX

获取价格

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT690B ZETEX

获取价格

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT690B DIODES

获取价格

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT690B KEXIN

获取价格

NPN Silicon Planar Medium Power High Gain Transistor
FZT690B TYSEMI

获取价格

Very low equivalent on-resistance; RCE(sat) 1
FZT690BQ DIODES

获取价格

NPN, 45V, 3A, SOT223
FZT690BTA DIODES

获取价格

Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT690BTC DIODES

获取价格

3A, 45V, NPN, Si, POWER TRANSISTOR