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FZT688BTC PDF预览

FZT688BTC

更新时间: 2024-11-18 19:46:43
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
2页 111K
描述
Transistor

FZT688BTC 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.57
最大集电极电流 (IC):4 A配置:Single
最小直流电流增益 (hFE):100JESD-609代码:e3
湿度敏感等级:1最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)标称过渡频率 (fT):150 MHz
Base Number Matches:1

FZT688BTC 数据手册

 浏览型号FZT688BTC的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR MEDIUM  
POWER HIGH GAIN TRANSISTOR  
ISSUE 3 - OCTOBER 1995  
FZT688B  
FEATURES  
*
*
Extremely low equivalent on resistance; RCE(sat) 83mat 3A  
C
Gain of 400 at IC=3 Amps and very low saturation voltage  
APPLICATIONS  
Flash gun convertors & Battery powered circuits  
*
E
C
PARTMARKING DETAIL –  
COMPLEMENTARY TYPE -  
FZT688B  
FZT788B  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
12  
Collector-Emitter Voltage  
Emitter-Base Voltage  
12  
V
5
V
Peak Pulse Current  
10  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
4
2
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C)  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Breakdown Voltages  
V(BR)CBO 12  
V(BR)CEO 12  
V
IC=100µA  
IC=10mA*  
IE=100µA  
V
V(BR)EBO  
ICBO  
5
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
0.1  
0.1  
V
CB=10V  
EB=4V  
µA  
µA  
IEBO  
V
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.04  
0.06  
0.18  
0.35  
0.40  
V
V
V
V
V
IC=0.1A, IB=1mA  
IC=0.1A,IB=0.5mA*  
IC=1A, IB=50mA*  
IC=3A, IB=20mA*  
IC=4A, IB=50mA*  
Base-Emitter SaturationVoltage  
Base-Emitter Turn-On Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.1  
1.0  
V
V
IC=3A, IB=20mA*  
IC=3A, VCE=2V  
Static Forward Current Transfer  
Ratio  
500  
400  
100  
IC=0.1A, VCE=2V*  
IC=3A, VCE=2V*  
IC=10A, VCE=2V*  
Transition Frequency  
fT  
150  
MHz IC=50mA,VCE=5V  
f=50MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
200  
40  
pF  
pF  
VEB=0.5Vf=1MHz  
VCB=10V,f=1MHz  
Cobo  
ton  
toff  
40  
500  
ns  
ns  
I =500mA, IB1=50A  
C
IB2=50mA, VCC=10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 217  

FZT688BTC 替代型号

型号 品牌 替代类型 描述 数据表
FZT688B DIODES

类似代替

NPN, 12V, 4A, SOT223
FZT688BTA DIODES

类似代替

Power Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4

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