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FZT692 PDF预览

FZT692

更新时间: 2024-11-17 22:48:51
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
2页 95K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FZT692 数据手册

 浏览型号FZT692的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR MEDIUM  
FZT692B  
POWER HIGH GAIN TRANSISTOR  
ISSUE 3 - OCTOBER 1995  
FEATURES  
C
*
High Gain + Very low saturation voltage  
APPLICATIONS  
E
*
*
Darlington replacement  
C
Relay drivers, DC-DC converters  
B
PARTMARKING DETAIL -  
FZT692B  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
70  
Collector-Emitter Voltage  
Emitter-Base Voltage  
70  
V
5
V
Peak Pulse Current  
5
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
2
2
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C)  
amb  
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS.  
PARAMETER  
BreakdownVoltages  
V(BR)CBO 70  
V(BR)CEO 70  
V
IC=100µA  
IC=10mA*  
IE=100µA  
V
V(BR)EBO  
ICBO  
5
V
Cut-Off Currents  
0.1  
0.1  
V
CB=55V  
EB=4V  
µA  
µA  
IEBO  
V
Saturation Voltages  
VCE(sat)  
0.15  
0.5  
0.5  
V
V
V
IC=0.1A, IB=0.5mA*  
IC=1A, IB=10mA*  
IC=2A, IB=200mA*  
VBE(sat)  
VBE(on)  
0.9  
0.9  
V
V
IC=1A, IB=10mA*  
IC=1A, VCE=2V*  
Base-Emitter  
Turn-On Voltage  
Static Forward Current  
Transfer Ratio  
hFE  
500  
400  
150  
IC=100mA,VCE=2V*  
IC=500mA, VCE =2V*  
IC=1A,VCE=2V*  
Transition Frequency  
Input Capacitance  
Output Capacitance  
Switching Times  
fT  
150  
MHz IC=50mA, VCE=5V, f=50MHz  
Cibo  
Cobo  
200  
12  
pF  
pF  
VEB=0.5V, f=1MHz  
VCB=10V, f=1MHz  
IC=500mA, IB1=50mA  
ton  
toff  
46  
1440  
ns  
ns  
IB2=50mA, VCC=10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 223  

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