Datasheet > FZT694

FZT694

更新时间： 2024-10-13 22:48:51

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
2页	101K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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FZT694 数据手册

SOT223 NPN SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FZT694B

FEATURES

High V_CEO/ Very Low Saturation Voltage

Gain of 400 at I_C=200mA

APPLICATIONS

Darlington replacement

Relay / solenoid driver

PARTMARKING DETAIL -

FZT694B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

120

Collector-Emitter Voltage

120

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

I_C

P_tot

°C

T_j:T_stg

= 25°C)

-55 to +150

amb

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT CONDITIONS.

Breakdown Voltages

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

120

I_C=100µA

I_C=10mA*

I_E=100µA

Collector Cut-Off Current

Emitter Cut-Off Current

0.1

V_CB=100V

µA

I_EBO

V_EB=4V

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.25

0.5

I_C=100mA, I_B=0.5mA*

I_C=400mA, I_B=5mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

0.9

I_C=1A, I_B=10mA*

Base-Emitter

Turn-On Voltage

0.9

I_C=1A, V_CE=2V*

Static Forward

Current Transfer

Ratio

500

400

150

I_C=100mA, V_CE=2V_*

I_C=200mA, V_CE=2V*

I_C=400mA, V_CE=2V*

Transition Frequency

f_T

130

MHz

I_C=50mA, V_CE=5V

f=50MHz

Input Capacitance

Output Capacitance

Switching Times

C_ibo

200

V_EB=0.5V, f=1MHz

V_CB=10V, f=1MHz

C_obo

t_on

t_off

2900

I_C=100mA, I_B!=10mA

I_B2=10mA, V_CC=50V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 225

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