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FZT690B PDF预览

FZT690B

更新时间: 2024-11-21 10:22:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管开关光电二极管局域网
页数 文件大小 规格书
2页 98K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FZT690B 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.55外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

FZT690B 数据手册

 浏览型号FZT690B的Datasheet PDF文件第2页 
NPN SILICON PLANAR MEDIUM POWER  
HIGH GAIN TRANSISTOR  
ISSUE 3 - OCTOBER 1995  
FZT690B  
FEATURES  
*
*
*
Very low equivalent on-resistance; RCE(sat) 125mat 2A  
Gain of 400 at IC=1 Amp  
C
Very low saturation voltage  
APPLICATIONS  
E
*
*
Darlington replacement  
C
Siren Drivers, DC-DC converters  
PARTMARKING DETAIL –  
FZT690B  
B
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
45  
Collector-Emitter Voltage  
Emitter-Base Voltage  
45  
V
5
V
Peak Pulse Current  
6
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
3
2
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C)  
amb  
SYMBOL MIN. TYP. MAX UNIT CONDITIONS.  
PARAMETER  
.
Collector-Base Breakdown  
Voltage  
V(BR)CBO 45  
V(BR)CEO 45  
V
IC=100µA  
Collector-EmitterBreakdown  
V
V
IC=10mA*  
Emitter-Base Breakdown  
Voltage  
V(BR)EBO  
5
IE=100µA  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICBO  
0.1  
0.1  
V
V
CB=35V  
EB=4V  
µA  
µA  
IEBO  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
0.1  
0.5  
V
V
IC=0.1A, IB=0.5mA*  
IC=1A, IB=5mA*  
Base-Emitter Saturation  
Voltage  
VBE(sat)  
0.9  
V
IC=1A, IB=10mA*  
Base-Emitter Turn-On Voltage VBE(on)  
0.9  
V
IC=1A, VCE=2V*  
Static Forward Current  
Transfer Ratio  
hFE  
500  
400  
150  
50  
IC=100mA,VCE=2V*  
IC=1A, VCE=2V*  
IC=2A, VCE=2V*  
IC=3A, VCE=2V*  
Transition Frequency  
Input Capacitance  
Output Capacitance  
Switching Times  
fT  
150  
MHz IC=50mA,VCE=5V,f=50MHz  
Cibo  
Cobo  
200  
16  
pF  
pF  
VEB=0.5V, f=1MHz  
VCB=10V, f=1MHz  
ton  
toff  
33  
1300  
ns  
ns  
IC=500mA, IB!=50mA  
IB2=50mA, VCC=10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 221  

FZT690B 替代型号

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