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FZT696B PDF预览

FZT696B

更新时间: 2024-10-13 22:48:51
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管功率双极晶体管开关光电二极管局域网
页数 文件大小 规格书
2页 100K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FZT696B 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.17
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:180 V
配置:SINGLE最小直流电流增益 (hFE):150
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):70 MHz
VCEsat-Max:0.25 VBase Number Matches:1

FZT696B 数据手册

 浏览型号FZT696B的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR MEDIUM  
POWER HIGH GAIN TRANSISTOR  
ISSUE 4 – FEBRUARY 1997  
FZT696B  
FEATURES  
*
*
*
250 Volt VCEO  
C
Gain of 500 at IC=100mA  
Very low saturation voltage  
APPLICATIONS  
E
*
*
Darlington replacement  
Battery powered circuits  
C
PARTMARKING DETAIL –  
FZT696B  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
180  
Collector-Emitter Voltage  
Emitter-Base Voltage  
180  
V
5
V
Peak Pulse Current  
1
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
0.5  
2
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C)  
amb  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
PARAMETER  
Collector-Base Breakdown  
Voltage  
V(BR)CBO 180  
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter Breakdown  
Voltage  
V(BR)CEO 180  
V
Emitter-Base Breakdown Voltage V(BR)EBO  
5
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICBO  
0.1  
0.1  
V
CB=140V  
EB=4V  
µA  
µA  
IEBO  
V
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
0.2  
0.2  
0.25  
V
V
V
IC=50mA, IB=0.5mA*  
IC=100mA, IB=2mA*  
IC=200mA, IB=5mA*  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-OnVoltage  
VBE(sat)  
VBE(on)  
hFE  
0.9  
0.9  
V
V
IC=200mA, IB=5mA*  
IC=200mA, VCE=5V*  
Static Forward Current Transfer  
Ratio  
500  
150  
IC=100mA, VCE=5V*  
IC=200mA, VCE=5V*  
Transition Frequency  
fT  
70  
MHz IC=50mA, VCE=5V  
f=50MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
200  
6
pF  
pF  
VEB=0.5V, f=1MHz  
VCE=10V, f=1MHz  
IC=100mA, IB1=10mA  
Cobo  
ton  
toff  
80  
4400  
ns  
ns  
IB2=10mA, VCC=50V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 227  

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