FZT690BQ

更新时间： 2024-11-19 13:45:39

品牌	Logo	应用领域
美台 - DIODES		晶体管功率双极晶体管
页数	文件大小	规格书
2页	98K
描述
NPN, 45V, 3A, SOT223

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数据手册

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FZT690BQ 数据手册

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FZT690B

FEATURES

Very low equivalent on-resistance; R_CE(sat)125mΩ at 2A

Gain of 400 at I_C=1 Amp

Very low saturation voltage

APPLICATIONS

Darlington replacement

Siren Drivers, DC-DC converters

PARTMARKING DETAIL

FZT690B

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C)

amb

SYMBOL MIN. TYP. MAX UNIT CONDITIONS.

PARAMETER

Collector-Base Breakdown

Voltage

V_(BR)CBO45

V_(BR)CEO45

I_C=100µA

Collector-EmitterBreakdown

I_C=10mA*

Emitter-Base Breakdown

Voltage

V_(BR)EBO

I_E=100µA

Collector Cut-Off Current

Emitter Cut-Off Current

I_CBO

0.1

_CB=35V

_EB=4V

µA

I_EBO

Collector-Emitter Saturation

Voltage

V_CE(sat)

0.1

0.5

I_C=0.1A, I_B=0.5mA*

I_C=1A, I_B=5mA*

Base-Emitter Saturation

Voltage

V_BE(sat)

0.9

I_C=1A, I_B=10mA*

Base-Emitter Turn-On Voltage V_BE(on)

0.9

I_C=1A, V_CE=2V*

Static Forward Current

Transfer Ratio

h_FE

500

400

150

I_C=100mA,V_CE=2V*

I_C=1A, V_CE=2V*

I_C=2A, V_CE=2V*

I_C=3A, V_CE=2V*

Transition Frequency

Input Capacitance

Output Capacitance

Switching Times

f_T

150

MHz I_C=50mA,V_CE=5V,f=50MHz

C_ibo

C_obo

200

V_EB=0.5V, f=1MHz

V_CB=10V, f=1MHz

t_on

t_off

1300

I_C=500mA, I_B!=50mA

I_B2=50mA, V_CC=10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 221

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