Datasheet > FZT692B

FZT692B

更新时间： 2024-11-18 07:00:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	37K
描述
NPN Silcon Planar Medium Power High Gain Transistor

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中文翻译

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数据手册

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FZT692B 数据手册

SMD Type

Transistors

NPN Silcon Planar Medium

Power High Gain Transistor

FZT692B

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

-0.2

6.50

Features

High gain + very low saturation voltage.

+0.2

0.90

-0.2

+0.1

-0.1

3.00

+0.3

7.00

-0.3

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Peak pulse current

Continuous collector current

Power dissipation

ICM

P^tot

Operating and storage temperature range

T^j,Tstg

-55 to +150

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与FZT692B相关器件

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FZT692BTC	ZETEX	获取价格	Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
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