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FZT749 PDF预览

FZT749

更新时间: 2024-09-17 11:11:47
品牌 Logo 应用领域
安森美 - ONSEMI PC晶体管
页数 文件大小 规格书
6页 271K
描述
PNP 低饱和晶体管

FZT749 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.15Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

FZT749 数据手册

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FZT749 替代型号

型号 品牌 替代类型 描述 数据表
NSS40300MZ4T1G ONSEMI

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Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor
FZT749TA DIODES

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