Datasheet > FZT692B

FZT692B

更新时间： 2024-11-19 14:52:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	815K
描述
SOT-223

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中文翻译

获取价格

数据手册

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FZT692B 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-223(8R) Plastic-Encapsulate Transistors

FZT692B TRANSISTOR (NPN)

SOT-223

FEATURES



High Voltage

Low saturation voltages

1. BASE

2. COLLECTOR

3. EMITTER

MARKING: ZT692B

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

V_CEO

Emitter-Base Voltage

V_EBO

Collector Current

I_C

2.5

I_CM

Collector Current-Pulsed

Collector Power Dissipation

0.8

156

P_C

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

R_θJA

℃/W

℃

T_J,T_stg

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=-0.1mA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-0.1mA,I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

V_CB=55V,I_E=0

100

V_EB=4V,I_C=0

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=2V, I_C=100mA

V_CE=2V, I_C=500mA

V_CE=2V, I_C=1A

500

400

150

DC current gain

I_C=100mA,I_B=0.5mA

I_C=1A,I_B=10mA

I_C=2A,I_B=200mA

0.15

0.5

V_CE(sat)

Collector-emitter saturation voltage

0.5

BE(sat)

I_C_1A,IB=10mA

0.9

Base-emitter saturation voltage

V_BE

V_CE=2V, I_C=1A

Base-emitter voltage

f_T

VCE=5V,IC=200mA, f=1MHz

MHz

Transition frequency

C_ob

V_CB= 20V, I_E=0, f=1MHz

Collector output capacitance

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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