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FZT689B PDF预览

FZT689B

更新时间: 2024-11-17 22:48:51
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管功率双极晶体管光电二极管局域网
页数 文件大小 规格书
2页 105K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FZT689B 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-223, 4 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.18Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):150JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:0.45 V
Base Number Matches:1

FZT689B 数据手册

 浏览型号FZT689B的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR MEDIUM  
POWER HIGH GAIN TRANSISTOR  
ISSUE 3 - OCTOBER 1995  
FZT689B  
FEATURES  
*
*
Gain of 400 at IC=2 Amps and low saturation voltage  
C
Extremely low equivalent on-resistance; RCE(sat) 92mat 3A  
APPLICATIONS  
*
*
Darlington replacement  
E
Flash gun convertors and Battery powered circuits  
PARTMARKING DETAIL -  
COMPLEMENTARY TYPE -  
FZT689B  
FZT789B  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
Collector-Base Voltage  
20  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
20  
5
V
Peak Pulse Current  
8
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
3
2
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C)  
amb  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
PARAMETER  
Breakdown Voltage  
Collector-Base  
Collector-Emitter  
V(BR)CBO  
V(BR)CEO  
20  
20  
V
V
IC=100µA  
IC=10mA*  
Emitter-Base  
V(BR)EBO  
ICBO  
5
V
IE=100µA  
Collector Cut-Off Current  
Emitter Cut-Off Current  
0.1  
0.1  
V
CB=16V  
EB=4V  
µA  
µA  
IEBO  
V
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.10  
0.50  
0.45  
V
V
V
IC=0.1A, IB=0.5mA*  
IC=2A, IB=10mA*  
IC=3A, IB=20mA*  
Base-EmitterSaturationVoltage VBE(sat)  
0.9  
0.9  
V
V
IC=1A, IB=10mA*  
IC=1A, VCE=2V*  
Base-Emitter  
Turn-On Voltage  
VBE(on)  
Static Forward  
Current Transfer  
Ratio  
hFE  
500  
400  
150  
IC=0.1A, VCE=2V*  
IC=2A, VCE=2V*  
IC=6A, VCE=2V*  
Transition Frequency  
fT  
150  
MHz IC=50mA, VCE=5V  
f=50MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
200  
16  
pF  
pF  
VEB=0.5V, f=1MHz  
VCB=10V, f=1MHz  
Cobo  
ton  
toff  
30  
800  
ns  
ns  
IC=500mA,IB1=50mA  
IB2=50mA, VCC=10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 219  

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