Datasheet > FZT688B

FZT688B

更新时间： 2024-11-09 12:33:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	89K
描述
Extremely low equivalent on resistance; RCE(sat)83mÃ at 3A

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FZT688B 数据手册

SMD Type

Transistors

Product specification

FZT688B

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

Extremely low equivalent on resistance; R^CE(sat)83mÙ at 3A.

Gain of 400 at IC=3 Amps and very low saturation voltage.

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Peak pulse current

Continuous collector current

Power dissipation

I^CM

P^tot

Operating and storage temperature range

T^j,T^stg

-55 to +150

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FZT688BTC	ZETEX	获取价格	Power Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
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FZT689B	ZETEX	获取价格	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT689B	DIODES	获取价格	SOT223 NPN SILICON PLANAR MEDIUM
FZT689BTA	DIODES	获取价格	Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT689BTA	ZETEX	获取价格	Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT689BTC	ZETEX	获取价格	Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT689BTC	DIODES	获取价格	暂无描述