Datasheet > FZT688B

FZT688B

更新时间： 2024-11-18 07:00:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	38K
描述
NPN Silicon Planar Medium Power High Gain Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FZT688B 数据手册

SMD Type

Transistors

NPN Silicon Planar Medium

Power High Gain Transistor

FZT688B

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

-0.2

6.50

Features

Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A.

Gain of 400 at IC=3 Amps and very low saturation voltage.

+0.2

0.90

-0.2

+0.1

-0.1

3.00

+0.3

7.00

-0.3

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Peak pulse current

Continuous collector current

Power dissipation

I^CM

P^tot

Operating and storage temperature range

T^j,Tstg

-55 to +150

www.kexin.com.cn

中文翻译

下载PDF

与FZT688B相关器件

型号	品牌	获取价格	描述	数据表
FZT688BTA	DIODES	获取价格	Power Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT688BTC	DIODES	获取价格	Transistor
FZT688BTC	ZETEX	获取价格	Power Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT689	ZETEX	获取价格	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT689B	ZETEX	获取价格	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT689B	DIODES	获取价格	SOT223 NPN SILICON PLANAR MEDIUM
FZT689BTA	DIODES	获取价格	Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT689BTA	ZETEX	获取价格	Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT689BTC	ZETEX	获取价格	Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT689BTC	DIODES	获取价格	暂无描述