FZT658-A

更新时间： 2024-11-09 13:07:55

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FZT658-A 数据手册

SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 - OCTOBER 1995

FZT658

FEATURES

400 Volt V_CEO

Low saturation voltage

COMPLEMENTARY TYPE -

PARTMARKING DETAIL -

FZT758

FZT658

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

400

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

I_C

0.5

P_tot

T_j:T_stg

-55 to +150

°C

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

I_C=100µA

I_C=10mA*

I_E=100µA

V_CB=320V

V_EB=4V

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

400

Collector Cut-Off Current

Emitter Cut-Off Current

100

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.3

0.25

0.5

I_C=20mA, I_B=1mA*

I_C=50mA, I_B=5mA*

I_C=100mA, I_B=10mA

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

0.9

I_C=100mA, I_B=10mA*

Base-Emitter

Turn-On Voltage

1.0

I_C=100mA, V_CE=5V*

Static Forward Current

Transfer Ratio

I_C=1mA, V_CE=5V*

I_C=100mA, V_CE=5V*

I_C=200mA, V_CE=10V*

Transition Frequency

f_T

MHz

I_C=10mA, V_CE=20V

f=20MHz

Output Capacitance

Switching Times

C_obo

t_on

V_CB=20V, f=1MHz

130

I_C=100mA, V_CC=100V

I_B1=10mA, I_B2=-20mA

3300

t_off

*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 215

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