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FZT658 PDF预览

FZT658

更新时间: 2024-11-08 22:48:51
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捷特科 - ZETEX 晶体晶体管开关光电二极管高压局域网
页数 文件大小 规格书
2页 80K
描述
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FZT658 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.15
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
基于收集器的最大容量:10 pF集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
最大关闭时间(toff):3300 ns最大开启时间(吨):130 ns
VCEsat-Max:0.5 VBase Number Matches:1

FZT658 数据手册

 浏览型号FZT658的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
ISSUE 4 - OCTOBER 1995  
FZT658  
FEATURES  
*
*
400 Volt VCEO  
C
Low saturation voltage  
E
C
COMPLEMENTARY TYPE -  
PARTMARKING DETAIL -  
FZT758  
FZT658  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
400  
400  
5
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Peak Pulse Current  
1
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
0.5  
2
A
Ptot  
W
Tj:Tstg  
-55 to +150  
°C  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=320V  
VEB=4V  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
400  
400  
5
V
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
100  
100  
nA  
nA  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.3  
0.25  
0.5  
V
V
V
IC=20mA, IB=1mA*  
IC=50mA, IB=5mA*  
IC=100mA, IB=10mA  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
0.9  
V
IC=100mA, IB=10mA*  
Base-Emitter  
Turn-On Voltage  
1.0  
V
IC=100mA, VCE=5V*  
Static Forward Current  
Transfer Ratio  
50  
50  
40  
IC=1mA, VCE=5V*  
IC=100mA, VCE=5V*  
IC=200mA, VCE=10V*  
Transition Frequency  
fT  
50  
MHz  
IC=10mA, VCE=20V  
f=20MHz  
Output Capacitance  
Switching Times  
Cobo  
ton  
10  
pF  
ns  
ns  
VCB=20V, f=1MHz  
130  
IC=100mA, VCC=100V  
IB1=10mA, IB2=-20mA  
3300  
toff  
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 215  

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