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FZT600TA PDF预览

FZT600TA

更新时间: 2024-09-16 19:57:11
品牌 Logo 应用领域
捷特科 - ZETEX 开关光电二极管晶体管
页数 文件大小 规格书
2页 115K
描述
Power Bipolar Transistor, 2A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

FZT600TA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-223, 4 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.28外壳连接:COLLECTOR
最大集电极电流 (IC):2 A基于收集器的最大容量:15 pF
集电极-发射极最大电压:140 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:1.2 V
Base Number Matches:1

FZT600TA 数据手册

 浏览型号FZT600TA的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR MEDIUM  
POWER DARLINGTON TRANSISTOR  
ISSUE 3 – FEBRUARY 1997  
FZT600  
FEATURES  
*
*
*
2A continuous current  
140 VOLT VCEO  
C
Guaranteed hFE Specified up to 1A  
E
PART MARKING DETAIL –  
FZT600  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VALUE  
UNIT  
V
Collector-Base Voltage  
160  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
ICM  
140  
V
10  
V
Peak Pulse Current  
4
A
Continuous Collector Current  
Power Dissipation  
IC  
2
2
A
Ptot  
W
°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
MIN. TYP.  
160  
PARAMETER  
SYMBOL  
V(BR)CBO  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
140  
10  
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off Current  
0.01  
10  
V
CB=140V  
µA  
µA  
VCB=140V, Tamb=100°C  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICES  
10  
VCES=140V  
VEB=8V  
µA  
µA  
IEBO  
0.1  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.75  
0.85  
1.1  
1.2  
V
V
IC=0.5A, IB=5mA*  
IC=1A, IB=10mA*  
Base-Emitter Saturation Voltage VBE(sat)  
Base-Emitter Turn-On Voltage VBE(on)  
1.7  
1.5  
1.9  
1.7  
V
V
IC=1A, IB=10mA*  
IC=1A, VCE=5V*  
Static Forward  
Current Transfer  
Ratio  
hFE  
1k  
2k  
1k  
IC=50mA, VCE=10V*  
IC=0.5A, VCE=10V*  
IC=1A, VCE=10V*  
100k  
100k  
5k  
10k  
5k  
10k  
20k  
10k  
IC=50mA, VCE=10V*  
IC=0.5mA, VCE=10V*  
IC=1A, VCE=10V*  
GROUP B  
Transition Frequency  
fT  
150  
250  
MHz  
IC=100mA, VCE=10V  
f=20MHz  
Output Capacitance  
Switching Times  
Cobo  
Ton  
10  
15  
MHz  
µs  
VCB=10V, f=1MHz  
0.75  
2.20  
IC=0.5A, VCE=10V  
IB1=IB2=0.5mA  
Toff  
µs  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 197  

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