FZT603QTA

更新时间： 2024-11-17 13:07:55

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管达林顿晶体管开关光电二极管局域网
页数	文件大小	规格书
3页	125K
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FZT603QTA 数据手册

SOT223 NPN SILICON PLANAR MEDIUM

POWER DARLINGTON TRANSISTOR

ISSUE 3 NOVEMBER 1995

FZT603

FEATURES

2A continuous current

Useful h_FEup to 6A

Fast Switching

PARTMARKING DETAIL DEVICE TYPE IN FULL

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

100

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation

I_C

P_tot

Operating and Storage Temperature Range

T_j:T_stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL

V_(BR)CBO

MIN. TYP.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

100

240

110

I_C=100µA

I_C=10mA*

I_E=100µA

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

0.01

_CB=80V

µA

V_CB=80V, T =100°C

amb

Emitter Cut-Off Current

Collector Cut-Off Current

I_EBO

0.1

V_EB=8V

µA

I_CES

V_CES=80V

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.79

0.80

0.88

0.99

0.86

0.88

0.90

1.00

1.13

I_C=0.25A, I_B=0.25mA*

I_C=0.4A, I_B=0.4mA*

I_C=1A, I_B=1mA*

I_C=2A, I_B=20mA*

I_C=2A, I_B=20mA

T_j=150°C

12 3

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