5秒后页面跳转
FZT604TA PDF预览

FZT604TA

更新时间: 2024-11-19 20:59:23
品牌 Logo 应用领域
捷特科 - ZETEX 开关光电二极管晶体管
页数 文件大小 规格书
3页 79K
描述
Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

FZT604TA 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.21
外壳连接:COLLECTOR最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):2000JESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
VCEsat-Max:1.5 VBase Number Matches:1

FZT604TA 数据手册

 浏览型号FZT604TA的Datasheet PDF文件第2页浏览型号FZT604TA的Datasheet PDF文件第3页 
SOT223 NPN SILICON PLANAR MEDIUM  
POWER DARLINGTON TRANSISTORS  
ISSUE 3 - OCTOBER 1995  
FZT604  
FZT605  
FEATURES  
C
*
*
Guaranteed hFE Specified up to 2A  
Fast Switching  
E
PARTMARKING DETAIL -  
DEVICE TYPE IN FULL  
C
COMPLEMENTARY TYPES - FZT604 - FZT704  
FZT605 - FZT705  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
FZT604  
120  
FZT605  
140  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
100  
120  
V
10  
4
V
Peak Pulse Current  
A
Continuous Collector Current  
Power Dissipation  
IC  
1.5  
2
A
Ptot  
W
°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
SYMBOL MIN. MAX. UNIT CONDITIONS.  
PARAMETER  
Collector-Base  
Breakdown Voltage  
FZT604  
FZT605  
V(BR)CBO 120  
140  
V
V
IC=100µA  
IC=100µA  
Collector-Emitter  
Breakdown Voltage  
FZT604  
FZT605  
V(BR)CEO 100  
120  
V
IC=10mA*  
IC=10mA*  
Emitter-Base Breakdown Voltage V(BR)EBO 10  
V
IE=100µA  
Collector Cut-Off  
Current  
FZT604  
ICBO  
0.01  
10  
VCB=100V  
VCB=100V,T  
µA  
µA  
=100°C  
=100°C  
FZT605  
0.01  
10  
V
V
CB=120V  
CB=120V,T  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
ICES  
0.1  
10  
10  
V
EB=8V  
µA  
µA  
µA  
Collector-Emitter  
Cut-Off Current  
FZT604  
FZT605  
VCES=100V  
CES=120V  
V
Collector-EmitterSaturation  
Voltage  
VCE(sat)  
1.0,  
1.5  
V
V
IC=250mA, IB=0.25mA*  
IC=1A, IB=1mA*  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.8  
1.7  
V
V
IC=1A, IB=1mA*  
IC=1A, VCE=5V*  
Static Forward  
Current Transfer Ratio  
2K  
5K  
2K  
0.5K  
IC=50mA, VCE=5V  
IC=500mA, VCE=5V*  
IC=1A, VCE=5V*  
100K  
IC=2A, VCE=5V*  
3 - 202  

与FZT604TA相关器件

型号 品牌 获取价格 描述 数据表
FZT605 ZETEX

获取价格

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
FZT605 DIODES

获取价格

SOT223 NPN SILICON PLANAR MEDIUM
FZT605_13 DIODES

获取价格

120V NPN DARLINGTON TRANSISTOR IN SOT223
FZT605TA DIODES

获取价格

120V NPN DARLINGTON TRANSISTOR IN SOT223
FZT605TC DIODES

获取价格

120V NPN DARLINGTON TRANSISTOR IN SOT223
FZT649 ZETEX

获取价格

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
FZT649 FAIRCHILD

获取价格

NPN Low Saturation Transistor
FZT649 ONSEMI

获取价格

NPN 低饱和晶体管
FZT649 TYSEMI

获取价格

3 Amp continuous current., Low saturation voltage
FZT649 KEXIN

获取价格

NPN Silicon Planar High Performance Transistor