Datasheet > FZT651Q

FZT651Q

更新时间： 2024-11-21 14:53:43

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	857K
描述
功率三极管

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中文翻译

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数据手册

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FZT651Q 数据手册

FZT651Q-HAF

NPN Silicon Epitaxial Planar Power Transistor

Features

• High Continuous Collector Current

• Low Saturation Voltage

• Halogen and Antimony Free(HAF),

RoHS compliant

1.Base 2.Collector 3.Emitter 4.Collector

SOT-223 Plastic Package

Absolute Maximum Ratings (T_a= 25

)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Current

Peak Collector Current, Pulsed

Total power dissipation

I_CM

P_tot

Junction and Storage Temperature Range

T_j,T_stg

- 55 to + 150

Thermal Characteristics

Symbol

R_θJA

Max.

62.5

Unit

Parameter

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 14/07/2023 Rev:01

12 3 4 5

中文翻译

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