Datasheet > FZT649

FZT649

更新时间： 2024-11-06 12:04:55

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管 PC
页数	文件大小	规格书
2页	90K
描述
3 Amp continuous current., Low saturation voltage

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FZT649 数据手册

Product specification

FZT649

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

25 Volt V^CEO.

+0.2

0.90

-0.2

3 Amp continuous current.

Low saturation voltage.

Excellent h^FEspecified up to 6A.

+0.1

3.00

-0.1

+0.3

7.00

-0.3

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Peak pulse current

Continuous collector current

Power dissipation

I^CM

P^tot

Operating and storage temperature range

T^j,T^stg

-55 to +150

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与FZT649相关器件

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FZT649_NL	FAIRCHILD	获取价格	暂无描述
FZT649D84Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT649L99Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT649S62Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT649TA	DIODES	获取价格	Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT649TC	ZETEX	获取价格	Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT649TC	DIODES	获取价格	Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT651	ZETEX	获取价格	NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS
FZT651	KEXIN	获取价格	NPN Silicon Planar High Performance Transistors
FZT651	DIODES	获取价格	SOT223 NPN SILICON PLANAR