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FZT649 PDF预览

FZT649

更新时间: 2024-11-19 22:48:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管光电二极管PC
页数 文件大小 规格书
3页 31K
描述
NPN Low Saturation Transistor

FZT649 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.16
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1012714Samacsys Pin Count:4
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:SOT223 (3-Pin)
Samacsys Footprint Name:SOT 233Samacsys Released Date:2018-12-12 03:43:16
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

FZT649 数据手册

 浏览型号FZT649的Datasheet PDF文件第2页浏览型号FZT649的Datasheet PDF文件第3页 
Discrete Power & Signal  
Technologies  
July 1998  
FZT649  
E
B
SOT-223  
NPN Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT649  
Symbol  
Parameter  
Units  
Collector-Emitter Voltage  
25  
V
VCEO  
Collector-Base Voltage  
Emitter-Base Voltage  
35  
5
V
V
VCBO  
VEBO  
Collector Current - Continuous  
3
A
IC  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT649  
Total Device Dissipation  
Thermal Resistance, Junction to Ambient  
2
W
PD  
62.5  
°C/W  
RqJA  
Page 1 of 2  
ã
1998 Fairchild Semiconductor Corporation  
fzt649.lwpPrNC 7/10/98 revB  

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