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FZT653TA PDF预览

FZT653TA

更新时间: 2024-11-18 11:50:39
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美台 - DIODES 晶体晶体管功率双极晶体管开关光电二极管PC局域网
页数 文件大小 规格书
2页 99K
描述
SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FZT653TA 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:15 weeks风险等级:0.87
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:5554Samacsys Pin Count:4
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT223 (3-Pin)
Samacsys Footprint Name:SOT-223-2Samacsys Released Date:2015-05-06 06:40:13
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):175 MHz
Base Number Matches:1

FZT653TA 数据手册

 浏览型号FZT653TA的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR  
FZT653  
HIGH PERFORMANCE TRANSISTOR  
ISSUE 3– FEBRUARY 1995  
FEATURES  
C
*
Low saturation voltage  
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FZT753  
FZT653  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
120  
Collector-Emitter Voltage  
100  
V
Emitter-Base Voltage  
5
V
Peak Pulse Current  
6
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
2
2
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
= 25°C unless otherwise stated).  
MAX. UNIT  
V
amb  
TYP.  
PARAMETER  
SYMBOL MIN.  
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
120  
100  
5
IC=100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V
V
IC=10mA*  
Emitter-Base Breakdown V(BR)EBO  
Voltage  
IE=100µA  
Collector Cut-Off Current ICBO  
0.1  
10  
V
CB=100V  
µA  
µA  
VCB=100V,T =100°C  
Emitter Cut-Off Current  
IEBO  
0.1  
VEB=4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.13  
0.23  
0.3  
0.5  
V
V
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
0.9  
1.25  
V
IC=1A, IB=100mA*  
Base-Emitter  
Turn-On Voltage  
0.8  
1.0  
V
IC=1A, VCE =2V*  
Static Forward Current  
Transfer Ratio  
70  
100  
55  
200  
200  
110  
55  
IC=50mA, VCE=2V*  
IC=500mA, VCE=2V*  
IC=1A, VCE=2V*  
300  
30  
25  
IC=2A, VCE=2V*  
Transition Frequency  
fT  
140  
175  
MHz  
IC=100mA, VCE =5V  
f=100MHz  
Output Capacitance  
Switching Times  
Cobo  
ton  
pF  
ns  
ns  
VCB=10V, f=1MHz  
80  
IC=500mA, VCC =10V  
IB1=IB2=50mA  
toff  
1200  
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 209  

FZT653TA 替代型号

型号 品牌 替代类型 描述 数据表
FZT653 DIODES

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SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

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