Datasheet > FZT657

FZT657

更新时间： 2024-09-16 07:00:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	36K
描述
NPN Silicon Planar Medium Power Transistor

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中文翻译

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数据手册

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FZT657 数据手册

SMD Type

Transistors

NPN Silicon Planar Medium Power Transistor

FZT657

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

Low saturation voltage

1 Base

2 Collector

3 Emitter

4 Collector

+0.1

0.70

-0.1

2.9

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

300

Collector-Emitter Voltage

300

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T^amb=25

Operating and Storage Temperature Range

I^C

0.5

Ptot

T^j:Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

Testconditons

Min Typ. Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

IC=100ìA

IC=10mA*

IE=100ìA

300

VCB=200V

0.1

0.5

1.0

ìA

Emitter Cut-Off Current

IEBO

VEB=3V

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

V^CE(sat)

V^BE(sat)

V^BE(on)

IC=100mA, IB=10mA*

IC=100mA, VCE =5V*

I^C=10mA, VCE =5V*

I^C=100mA, VCE =5V*

Static Forward Current Transfer Ratio

h^FE

Transition Frequency

Output Capacitance

f^T

IC=10mA, VCE =20V,f=20MHz

VCB =20V, f=1MHz

MHz

C^obo

* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%

Marking

FZT657

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