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FZT655 PDF预览

FZT655

更新时间: 2024-11-18 10:22:59
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美台 - DIODES 晶体晶体管功率双极晶体管光电二极管局域网
页数 文件大小 规格书
2页 93K
描述
SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FZT655 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:SOT-223包装说明:SOT-223, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.25Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

FZT655 数据手册

 浏览型号FZT655的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR  
FZT655  
HIGH PERFORMANCE TRANSISTOR  
FEATURES  
ISSUE 3– FEBRUARY 1995  
C
*
Low saturation voltage  
COMPLEMENTARY TYPE – FZT755  
PARTMARKING DETAIL – FZT655  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
150  
Collector-Emitter Voltage  
Emitter-Base Voltage  
150  
V
5
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
1
2
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
150  
150  
5
IC=100µA  
Collector-Emitter  
Breakdown Voltage  
V
V
IC=10mA*  
Emitter-Base  
Breakdown Voltage  
IE=100µA  
Collector Cut-Off Current ICBO  
0.1  
0.1  
VCB=125V  
VEB=3V  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.5  
0.5  
V
V
IC=500mA, IB=50mA*  
IC=1A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.1  
V
IC=500mA, IB=50mA*  
Base-Emitter  
Turn-On Voltage  
1.0  
V
IC=500mA, VCE =5V*  
Static Forward Current  
Transfer Ratio  
50  
50  
20  
IC=10mA, VCE =5V*  
IC=500mA, VCE =5V*  
IC=1A, VCE =5V*  
300  
20  
Transition Frequency  
fT  
30  
MHz  
pF  
IC=10mA, VCE =20V  
f=20MHz  
Output Capacitance  
Cobo  
VCB =10V, f=1MHz  
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle 2%  
3 - 211  

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