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FZT655Q PDF预览

FZT655Q

更新时间: 2024-11-19 14:54:51
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
5页 821K
描述
功率三极管

FZT655Q 数据手册

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FZT655Q-HAF  
NPN Silicon Epitaxial Planar Power Transistor  
4
Features  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
2
1.Base 2.Collector 3.Emitter 4.Collector  
SOT-223 Plastic Package  
Absolute Maximum Ratings (Ta = 25  
)
Parameter  
Symbol  
Value  
Unit  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
150  
V
V
150  
7
V
Collector Current  
1
A
ICM  
2
2 1)  
A
Peak Collector Current, Pulsed  
Total Power Dissipation  
Total Power Dissipation  
PD  
W
W
PD  
3 2)  
Operating Junction and Storage Temperature Range  
Tj, Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Value  
62.5 1)  
41.7 2)  
Unit  
/W  
Thermal Resistance from Junction to Ambient  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
2) Device mounted on FR-4 substrate PC board, 2oz copper, with 2-inch square copper plate in still air.  
1 / 5  
®
Dated: 03/07/2023 Rev: 03  

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