Datasheet > FZT655

FZT655

更新时间： 2024-11-17 22:48:51

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管光电二极管局域网
页数	文件大小	规格书
2页	93K
描述
NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

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中文翻译

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数据手册

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FZT655 数据手册

SOT223 NPN SILICON PLANAR

FZT655

HIGH PERFORMANCE TRANSISTOR

✪

FEATURES

ISSUE 3 FEBRUARY 1995

Low saturation voltage

COMPLEMENTARY TYPE FZT755

PARTMARKING DETAIL FZT655

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

150

Collector-Emitter Voltage

Emitter-Base Voltage

150

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

150

I_C=100µA

Collector-Emitter

Breakdown Voltage

I_C=10mA*

Emitter-Base

Breakdown Voltage

I_E=100µA

Collector Cut-Off Current I_CBO

0.1

V_CB=125V

V_EB=3V

µA

Emitter Cut-Off Current

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.5

I_C=500mA, I_B=50mA*

I_C=1A, I_B=200mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

1.1

I_C=500mA, I_B=50mA*

Base-Emitter

Turn-On Voltage

1.0

I_C=500mA, V_CE=5V*

Static Forward Current

Transfer Ratio

I_C=10mA, V_CE=5V*

I_C=500mA, V_CE=5V*

I_C=1A, V_CE=5V*

300

Transition Frequency

f_T

MHz

I_C=10mA, V_CE=20V

f=20MHz

Output Capacitance

C_obo

V_CB=10V, f=1MHz

*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%

3 - 211

中文翻译

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