Datasheet > FZT649L99Z

FZT649L99Z

更新时间： 2024-11-21 07:27:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	46K
描述
Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FZT649L99Z 数据手册

Discrete Power & Signal

Technologies

July 1998

FZT649

SOT-223

NPN Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A

continuous.

Absolute Maximum Ratings*

T_{A = 25°C unless otherwise noted}

FZT649

Symbol

Parameter

Units

Collector-Emitter Voltage

V_CEO

Collector-Base Voltage

Emitter-Base Voltage

V_CBO

V_EBO

Collector Current - Continuous

I_C

Operating and Storage Junction Temperature Range

-55 to +150

°C

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

T_{A = 25°C unless otherwise noted}

Max

Characteristic

Symbol

Units

FZT649

Total Device Dissipation

Thermal Resistance, Junction to Ambient

P_D

62.5

°C/W

R_qJA

Page 1 of 2

1998 Fairchild Semiconductor Corporation

fzt649.lwpPrNC 7/10/98 revB

12 3

中文翻译

下载PDF

与FZT649L99Z相关器件

型号	品牌	获取价格	描述	数据表
FZT649S62Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT649TA	DIODES	获取价格	Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT649TC	ZETEX	获取价格	Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT649TC	DIODES	获取价格	Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
FZT651	ZETEX	获取价格	NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS
FZT651	KEXIN	获取价格	NPN Silicon Planar High Performance Transistors
FZT651	DIODES	获取价格	SOT223 NPN SILICON PLANAR
FZT651	TYSEMI	获取价格	60 Volt VCEO, 3 Amp continuous current.
FZT651	BL Galaxy Electrical	获取价格	60V,3A,General Purpose NPN Bipolar Transistor
FZT651_12	DIODES	获取价格	60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223