Datasheet > FZT649L99Z

FZT649L99Z

更新时间： 2024-11-07 07:27:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	46K
描述
Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

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FZT649L99Z 数据手册

Discrete Power & Signal

Technologies

July 1998

FZT649

SOT-223

NPN Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A

continuous.

Absolute Maximum Ratings*

T_{A = 25°C unless otherwise noted}

FZT649

Symbol

Parameter

Units

Collector-Emitter Voltage

V_CEO

Collector-Base Voltage

Emitter-Base Voltage

V_CBO

V_EBO

Collector Current - Continuous

I_C

Operating and Storage Junction Temperature Range

-55 to +150

°C

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

T_{A = 25°C unless otherwise noted}

Max

Characteristic

Symbol

Units

FZT649

Total Device Dissipation

Thermal Resistance, Junction to Ambient

P_D

62.5

°C/W

R_qJA

Page 1 of 2

1998 Fairchild Semiconductor Corporation

fzt649.lwpPrNC 7/10/98 revB

12 3

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