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FZT649 PDF预览

FZT649

更新时间: 2024-11-19 11:14:11
品牌 Logo 应用领域
安森美 - ONSEMI PC光电二极管晶体管
页数 文件大小 规格书
5页 160K
描述
NPN 低饱和晶体管

FZT649 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95Factory Lead Time:1 week
风险等级:0.74外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

FZT649 数据手册

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