是否无铅: | 不含铅 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | Factory Lead Time: | 1 week |
风险等级: | 0.74 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZT649_NL | FAIRCHILD |
获取价格 |
暂无描述 | |
FZT649D84Z | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
FZT649L99Z | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
FZT649S62Z | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
FZT649TA | DIODES |
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Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
FZT649TC | ZETEX |
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Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
FZT649TC | DIODES |
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Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
FZT651 | ZETEX |
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NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS | |
FZT651 | KEXIN |
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NPN Silicon Planar High Performance Transistors | |
FZT651 | DIODES |
获取价格 |
SOT223 NPN SILICON PLANAR |